1EDN8511BXUSA1 representative package visual — not an exact-product photograph
Representative package visual — not an exact-product photographProduct referenceVendor-delivered DigiKey product/package image
Exact MPN17 sourced attributes1 source document

Infineon Technologies · exact orderable part

1EDN8511BXUSA1

IC GATE DRV HALF BRD/LOW SOT23-6

Driven Configuration
Low-Side
Gate Type
N-Channel, P-Channel MOSFET
Channel Type
Single
Number of Drivers
1
Voltage - Supply
8V ~ 20V
Current - Peak Output (Source, Sink)
4A, 8A
Logic Voltage - VIL, VIH
1.2V, 1.9V
Input Type
Inverting, Non-Inverting
Rise / Fall Time (Typ)
6.5ns, 4.5ns
Original manufacturerCommercial terms confirmed per lot
ManufacturerInfineon Technologies
Package / caseSOT-23-6
Mounting typeSurface Mount
PackingTape & Reel (TR) Cut Tape (CT) Digi-Reel®

Technical parameters

Technical specifications

1EDN8511BXUSA1 technical parameters
ParameterValue
Base Product Number1EDN8511 [1]
Channel TypeSingle [1]
Current - Peak Output (Source, Sink)4A, 8A [1]
Driven ConfigurationLow-Side [1]
DigiKey ProgrammableNot Verified [1]
Gate TypeN-Channel, P-Channel MOSFET [1]
Input TypeInverting, Non-Inverting [1]
Logic Voltage - VIL, VIH1.2V, 1.9V [1]
MfrInfineon Technologies [1]
Mounting TypeSurface Mount [1]
Number of Drivers1 [1]
Operating Temperature-40°C ~ 150°C (TJ) [1]
Product StatusActive [1]
Rise / Fall Time (Typ)6.5ns, 4.5ns [1]
Voltage - Supply8V ~ 20V [1]
Package / CaseSOT-23-6 [1]
SeriesEiceDriver™ [1]

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